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基于直接二进制搜索算法设计的超紧凑In2Se3可调控功率分束器
图1器件整体结构(a)优化后得到的结果和器件的参数,其中Out1与Out2为器件的两个输出端口;(b)初始化时划分好的像素点网格和圆孔的初始位置
Fig.1.Overalldevicestructure:(a)Optimizedresultsanddeviceparameters,whereOut1andOut2arethetwooutputportsofthedevice;(b)theinitialpositionofthedividedpixelgridandtheairholeduringinitialization.
图2DBS流程图
Fig.2.DBSFlowchart.
图3通过模拟仿真得到的3种分束比下的结果(a)In2Se3在α态时实现的1∶1分束比;(b)1∶1分束比下两个端口的透过率;(c)In2Se3在中间混合态时实现的1∶1.5分束比;(d)1∶1.5分束比下两个端口的透过率;(e)In2Se3在β态时实现的1∶2分束比;(f)1∶2分束比下两个端口的透过率
Fig.3.Resultsobtainedbysimulationforthreebeamsplittingratios:(a)1:1beamsplittingratioachievedforIn2Se3intheαstate;(b)transmittanceoftwoportsat1∶1beamsplittingratio;(c)1∶1.5beamsplittingratioachievedbyIn2Se3intheintermediatemixedstate;(d)transmittanceofbothportsat1∶1.5beamsplittingratio.(e)1∶2beamsplittingratioachievedbyIn2Se3inthebetastate;(f)transmittanceoftwoportsat1∶2beamsplittingratio.
图5(a)In2Se3的α态与β态在混合态中占比对折射率的影响;(b)In2Se3在相变过程中实现的分束比变化
Fig.5.(a)InfluenceoftheproportionofαandβstatesofIn2Se3inthemixedstateontherefractiveindex;(b)variationoftheupperandlowerportsplittingratioinIn2Se3phasetransition.
图6SOI平台与In2Se3设计的功率分束器在实现相同分束比时的打孔情况(a)SOI平台实现1∶1,1∶1.5,1∶2分束比的功率分束器;(b)In2Se3材料实现1∶1,1∶1.5,1∶2分束比的功率分束器;(c)SOI平台与In2Se3实现各个分束比时的IL对比
Fig.6.PerforationofSOIplatformandIn2Se3designedpowerbeamsplittersinachievingthesamebeamsplittingratio:(a)SOIplatformrealizingpowerbeamsplitterswith1∶1,1∶1.5,and1∶2beamsplittingratios;(b)In2Se3materialrealizingpowerbeamsplitterswith1∶1,1∶1.5,and1∶2beamsplittingratios;(c)ILcomparisonbetweenSOIplatformandIn2Se3whenrealizingeachbeamsplittingratio.
图7圆孔直径对器件的影响(a)In2Se3在α态时圆孔直径误差在5nm范围内的IL;(b)In2Se3在中间混合态时圆孔直径误差在5nm范围内的IL;(c)In2Se3在β态时圆孔直径误差在5nm范围内的IL;(d)In2Se3在α态时圆孔直径误差在5nm范围内的平衡误差;(e)In2Se3在中间混合态时圆孔直径误差在5nm范围内的平衡误差;(f)In2Se3在β态时圆孔直径误差在5nm范围内的平衡误差
Fig.7.Effectofaircircularholediameteronthedevice:(a)ILofIn2Se3inαstatewithcircularholediametererrorintherangeof5nm;(b)ILofIn2Se3inintermediatemixedstatewithcircularholediametererrorintherangeof5nm;(c)ILofIn2Se3inβstatewithcircularholediametererrorintherangeof5nm;(d)theequilibriumerrorofIn2Se3inαstatewithcircularholediametererrorintherangeof5nm;(e)theequilibriumerrorofIn2Se3intheintermediatemixedstatewithacircularholediametererrorintherangeof5nm;(f)theequilibriumerrorofIn2Se3intheβ-statewithacircularholediametererrorintherangeof5nm.
表1几种相变材料的光学性能比较(A,非晶态;C,晶态;k,消光系数)
Table1.Comparisonofopticalpropertiesofseveralphasechangematerials(A,amorphous;C,crystalline;k,extinctioncoefficients).
表2目前报道的几种功率分束器与本文设计的功率分束器的比较
Table2.Comparisonofseveralpowersplittersreportedatpresentwiththepowersplitterdesignedinthispaper.